insulated gate bipolar transistor (IGBT) market Size, Share, Forecast 2028


The insulated gate bipolar transistor (IGBT) market has witnessed significant growth in recent years, driven by the increasing demand for energy-efficient power electronics in various industries such as automotive, renewable energy, and industrial automation. IGBT is a power semiconductor device that combines the high-speed switching capability of a transistor with the low on-state power losses of a bipolar transistor. It is widely used in applications such as motor drives, inverters, and power supplies. The market has seen the emergence of various IGBT modules such as discrete IGBT modules and IGBT modules with integrated gate drivers. The IGBT market is expected to continue to grow in the coming years, driven by the increasing demand for high-power electronics and the adoption of electric vehicles and renewable energy sources.

Read More: https://www.fortunebusinessinsights.com/industry-reports/igbt-module-market-100501

 

Key Players:

  • Infineon Technologies AG (Munich, Germany)
  • ABB Ltd (Zürich, Switzerland)
  • Mitsubishi Electric Corporation (Tokyo, Japan)
  • Danfoss Group (Nordborg, Denmark)
  • Fuji Electric Co., Ltd. (Tokyo, Japan)
  • Hitachi, Ltd. (Tokyo, Japan)
  • Toshiba Corporation (Tokyo, Japan)
  • ROHM CO., LTD (Kyoto, Japan)
  • LITTELFUSE, INC. (Illinois, United States)
  • StarPower Semiconductor Ltd. (Jiaxing, China)

 

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